Fabrication and metrology of diffraction limited soft x-ray optics for the EUV microlithography
Fabrication and metrology of diffraction limited soft x-ray optics for the EUV microlithography
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DOI：
10.1117/12.511489
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发表时间：
2004-01
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影响因子：
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通讯作者：
U. Dinger;G. Seitz;Stefan Schulte;F. Eisert;C. Muenster;S. Burkart;S. Stacklies;Christian Bustaus;H. Hoefer;Maximilian Mayer;Bernhard Fellner;Oliver Hocky;Markus Rupp;Klaus Riedelsheimer;Peter Kuerz
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文献类型：
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作者：
U. Dinger;G. Seitz;Stefan Schulte;F. Eisert;C. Muenster;S. Burkart;S. Stacklies;Christian Bustaus;H. Hoefer;Maximilian Mayer;Bernhard Fellner;Oliver Hocky;Markus Rupp;Klaus Riedelsheimer;Peter Kuerz
EUVL，即 13 纳米微光刻技术，是最有可能满足 IC 制造路线图 45 纳米及以下节点要求的技术之一。满足场尺寸和分辨率生产要求的第一步和扫描机的开发正在进行中。这些机器的关键部件是具有非球面表面的衍射限制离轴镜系统。这些镜子的光学表面必须以前所未有的精度制造和测量。近年来，Carl Zeiss SMT AG 的技术开发主要集中在 NA=0.30 微曝光工具 (MET) 的轴上非球面。目前，该技术已转移到 NA=0.25 离轴大视场系统的表面。将回顾同轴和离轴反射镜的制造和计量的现状。
EUVL, i.e. microlithography at 13nm is one of the most likely technologies to satisfy the requirements for the 45nm-node and below of the IC-manufacturing roadmap. The development of the first step and scan machines meeting production requirements of field size and resolution is in progress. A key component of these machines will be a diffraction limited, off-axis mirror system with aspherical surfaces. The optical surfaces of these mirrors have to be fabricated and measured with unprecedented accuracy. In recent years, technology development at Carl Zeiss SMT AG was focussed on the on-axis aspheres of the NA=0.30 micro exposure tool (MET). Presently this technology is transferred to the surfaces of a NA=0.25 off-axis, large field system The current status of the fabrication and metrology of both on-axis and off-axis mirrors will be reviewed.