Polycrystalline silicon thin films on glass by aluminum-induced crystallization
Polycrystalline silicon thin films on glass by aluminum-induced crystallization
复制标题
DOI：
10.1109/16.791997
复制
发表时间：
1999-10
影响因子：
3.1
通讯作者：
O. Nast;S. Brehme;D. Neuhaus;S. Wenham
中科院分区：
文献类型：
--
作者：
O. Nast;S. Brehme;D. Neuhaus;S. Wenham
这项工作的重点是直接在低温玻璃上开发和表征器件质量的薄膜晶体硅层。研究和讨论了高性能器件制造所需的材料要求和晶体学质量。研究了在镀铝玻璃衬底上溅射非晶硅的铝致晶化工艺。采用电子束显微镜和离子束显微镜研究了连续多晶硅层的结晶过程和结构。该层的形成伴随着退火过程中交换位置的Al和Si薄膜并置层的形成。多晶硅材料的晶粒尺寸比薄膜的厚度大很多倍。拉曼和薄膜x射线衍射测量证实了硅层的良好结晶质量。电学性质由温度相关霍尔效应测量来研究。结果表明，电输运是由晶体内部的性质而不是晶界决定的。AIC的具体优点是：(1)其简单性和工业相关性，特别是对于溅射沉积和热蒸发过程，(2)它只需要500/spl℃的低温加工，(3)加工时间短，(4)它能够生产具有良好晶体学和电学性能的多晶材料。这些优点使得AIC形成的多晶硅材料非常有趣，适合于后续器件制造，例如多晶硅薄膜太阳能电池。
This work focuses on the development and characterization of device quality thin-film crystalline silicon layers directly onto low-temperature glass. The material requirements and crystallographic quality necessary for high-performance device fabrication are studied and discussed. The processing technique investigated is aluminum-induced crystallization (AIC) of sputtered amorphous silicon on Al-coated glass substrates. Electron and ion beam microscopy are employed to study the crystallization process and the structure of the continuous polycrystalline silicon layer. The formation of this layer is accompanied by the juxtaposed layers of Al and Si films exchanging places during annealing. The grain sizes of the poly-Si material are many times larger than the film's thickness. Raman and thin-film X-ray diffraction measurements verify the good crystalline quality of the Si layers. The electrical properties are investigated by temperature dependent Hall effect measurements. They show that the electrical transport is governed by the properties within the crystallites rather than the grain boundaries. The specific advantages of AIC are: (1) its simplicity and industrial relevance, particularly for the processes of sputter deposition and thermal evaporation, (2) it requires only low-temperature processing at 500/spl deg/C, (3) its short processing times, and (4) its ability to produce polycrystalline material with good crystallographic and electrical properties. These advantages make the poly-Si material formed by AIC highly interesting and suitable for subsequent device fabrication such as for poly-Si thin-film solar cells.