Surface tension of molten silicon measured by microgravity oscillating drop method and improved sessile drop method
Surface tension of molten silicon measured by microgravity oscillating drop method and improved sessile drop method
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DOI：
10.1016/j.actamat.2005.10.058
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发表时间：
2006-03
期刊：
影响因子：
9.4
通讯作者：
H. Fujii;Taihei Matsumoto;Shun Izutani;S. Kiguchi;K. Nogi
中科院分区：
文献类型：
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作者：
H. Fujii;Taihei Matsumoto;Shun Izutani;S. Kiguchi;K. Nogi
使用振荡滴法和改进的座滴法测量熔融硅的表面张力。振荡滴法是在微重力条件下使用的。硅样品的纯度为9N。气氛为 Ar-3% H2 气体，使用铂石棉和高氯酸镁纯化。使用振荡滴法测量的结果与使用坐滴法测量的结果非常吻合，并由以下方程表示：γ=733−0.062(T−1687)，其中γ是表面张力（mN/m），T是温度（K）。振荡滴法所得值的散布标准偏差小于1%，小于静滴法所得值。此外，使用振荡滴法可以在包括过冷状态在内的更宽的温度范围内测量表面张力。因此，获得了更加精确的温度依赖性。
The surface tension of molten silicon was measured using both the oscillating drop method and an improved sessile drop method. The oscillating drop method was used under microgravity conditions. The purity of the silicon sample was 9N. The atmosphere was Ar–3% H2gas purified using platinum asbestos and magnesium perchlorate. The result measured using the oscillating drop method agrees very well with that measured using the sessile drop method, and is expressed by the following equation: γ=733−0.062(T−1687), where γ is the surface tension (mN/m) and T is the temperature (K). The standard deviation of the scatter of the values obtained by the oscillating drop method is less than 1% which is smaller than that obtained by the sessile drop method. In addition, the surface tension can be measured over a wider temperature range including the undercooled state using the oscillating drop method. Accordingly, a much more accurate temperature dependence is obtained.