Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection
Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection
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用于微光检测的门控横向晶闸管的设计和数值验证
DOI：
10.1109/jeds.2021.3114751
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发表时间：
2021
影响因子：
2.3
通讯作者：
Zheyao Wang
中科院分区：
文献类型：
--
作者：
Keyang Sun;Liyang Pan;Dong Wu;Jun Xu;Zheyao Wang
在开关点工作的晶闸管对外部物理信号（如光或温度）高度敏感。然而，由于灵敏开关点的不稳定性，传统的晶闸管通常被用作光开关，很少用于微光检测。在这项工作中，一个硅基栅控横向晶闸管（GC-LT），它利用在低光下的高灵敏度，通过数值模拟进行了研究。一个晶闸管光电探测器电路和一种新的超关复位操作方法也提出了偏置的GC-LT的开关点迅速，并允许光电探测器工作在一个单调的动态多采样模式，以实现低光的高灵敏度。模拟结果表明，在不触发GC-LT的情况下，复位时间可缩短<inline-formula><tex-math notation="LaTeX">至< 10 μ s</tex-math></inline-formula>，且光电探测器的触发时间对<inline-formula><tex-math notation="LaTeX">1 × 10 - 9</tex-math></inline-formula>~<inline-formula><tex-math notation="LaTeX">2. 5 × 10 - 6</tex-math></inline-formula> W/cm<sup>2</sup>的光功率密度敏感此外，平均光学增益约为8.0-6.3，比Si钉扎光电二极管的平均光学增益高约一个数量级。
Thyristors operated at switching point are highly sensitive to external physical signals such as light or temperature. However, due to the instability of sensitive switching point, conventional thyristors are commonly used as optical switches and hardly applied for low-light level detection. In this work, a silicon-based gate-controlled lateral thyristor (GC-LT), which takes advantage of high sensitivity at low-light, is studied by numerical simulation. A thyristor photodetector circuit and a novel super-off Reset operation method are also proposed to bias the GC-LT over the switching point quickly and allow the photodetector to be operated in a monotonic dynamic multi-sampling mode to achieve high sensitivity to low-light. Simulation results show that the Reset time can be shortened to <inline-formula> <tex-math notation="LaTeX">$ < 10~\mu \text{s}$ </tex-math></inline-formula> without trigging the GC-LT. The trigger time of the photodetector is sensitive to the optical power density ranging from <inline-formula> <tex-math notation="LaTeX">$1\times 10^{-9}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$2.5\times 10^{-6}$ </tex-math></inline-formula> W/cm<sup>2</sup>. Furthermore, the average optical gain is about 8.0-6.3, approximately one order of magnitude higher than that of the Si pinned photodiode.