Slanted coupling of one-dimensional arrays of small tunnel junctions
Slanted coupling of one-dimensional arrays of small tunnel junctions
复制标题
小隧道结一维阵列的倾斜耦合
DOI：
10.1063/1.368997
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发表时间：
1998
影响因子：
3.2
通讯作者：
J. Y. Ryu
中科院分区：
文献类型：
--
作者：
G. Hu;R. F. O’Connell;J. Y. Ryu
本文研究了两个具有相等结电容C、相等杂散电容Co、相等耦合电容Cc的一维阵列的斜耦合静电问题。在弱耦合极限（Cc/C 1），我们得到的电位分布和相应的吉布斯自由能的解析解，我们推导出各种电荷传输模式的阈值电压。我们的结果表明，C 0，Cc，和偏置电压V1都起着重要的作用，在确定系统的阈值电压。在小杂散电容极限（C 0/C 1）下，阈值电压与1/C成正比，而在大杂散电容极限（C 0/C 1）下，阈值电压变得与C无关。此外，在小的Cc/C极限下，单电子隧穿总是具有比电子-空穴隧穿和混合隧穿更低的阈值电压。此外，我们还发现V_1对电子-空穴隧穿阈值电压的影响比V_1对电子-空穴隧穿阈值电压的影响更为显著。
We have studied the electrostatic problem of the slanted coupling of two one-dimensional (1D) arrays with equal junction capacitances C, equal stray capacitances Co, equal coupling capacitances Cc, and with both arrays biased. In the weak coupling limit (Cc/C≪1), we obtain an analytic solution for the potential profile and the corresponding Gibbs free energy, and we derive threshold voltages for various charge transport modes. Our results show that C0, Cc, and the bias voltage V1 all play important roles in determining the threshold voltage of the system. In the small stray capacitance limit (C0/C≪1), the threshold voltage is proportional to 1/C, while in the large stray capacitance limit (C0/C≫1), the threshold voltage becomes independent of C. Also, in the small Cc/C limit, single electron tunneling always has a lower threshold voltage than that of the electron-hole and mixed tunneling. In addition, we find that V1 has a more dramatic effect on the electron-hole tunneling threshold voltage than on that ...