GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
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(100) GaAs 衬底上的 GaxIn1−xP 液相外延生长
DOI：
10.1063/1.330023
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
K. Oe
中科院分区：
文献类型：
--
作者：
H. Asai;K. Oe
我们在785 °C的生长温度下在（100）GaAs衬底上进行了Gax In 1 −xP液相外延（LPE）生长。生长熔体中的P原子分数在每次LPE生长运行中保持恒定。测量了GaxIn 1 −xP层与GaAs衬底之间垂直于晶片表面的晶格失配Δ a1/a0以及合金层的光致发光（PL）。结果表明，在室温下，Δ a_0/a_0和PL峰能量分别在+0.47 ~-0.13%，1.869 ~ 1.921 eV范围内随Ga原子在生长熔体中的含量呈线性变化。这意味着在（100）GaAs衬底上的Gax In 1 −xP的LPE生长中不会发生所谓的组分牵引现象。
We have performed Gax In1−xP liquid phase epitaxial (LPE) growth on (100) GaAs substrates at a growth temperature of 785 °C. The P atom fraction in the growth melts was kept constant every LPE growth run. The lattice mismatch Δa⊥/a0 between the Gax In1−xP layer and GaAs substrate normal to the wafer surface and photoluminescence (PL) of the alloy layer were measured. It was found that Δa⊥/a0 and the PL peak energy vary linearly from +0.47 to −0.13% and from 1.869 to 1.921 eV at room temperature, depending on the Ga atom fraction in the growth melts, respectively. This means that the so‐called composition pulling phenomenon does not occur in LPE growth of Gax In1−xP on (100) GaAs substrates.