Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method.
Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method.
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通过中性簇束沉积法制备并四苯和并五苯基有机薄膜晶体管的研究。
DOI：
10.1021/jp054894r
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Jong
中科院分区：
文献类型：
--
作者：
P. S. Abthagir;Young;Eun;Seonhee Jeong;H. Seo;Jong
中性簇束沉积（NCBD）方法已被应用于以四烯和并五烯分子为活性层的有机薄膜晶体管（OTFTs）的制备和表征。在六甲基二氮杂化（HMDS）和预处理二氧化硅（SiO2）衬底上，采用NCBD法制备了室温下的有机薄膜。采用原子力显微镜（AFM）和x射线衍射仪（XRD）对四烯和并五烯薄膜的表面形貌和结构进行了表征。测量结果表明，弱束缚和高定向中性簇束可以有效地制备出表面均匀光滑的高质量单晶薄膜，并且用HMDS对SiO2进行表面处理可以提高并五苯薄膜相的结晶度。具有顶接触结构的四烯基和五苯基OTFTs在不同栅极电压下表现出典型的源漏电流调制特性。器件参数，如空穴载流子迁移率、电流开/关比、阈值电压和亚阈值斜率，已经从电流-电压特性以及HMDS表面处理的影响中导出。特别是，hmds未经处理的otft的高场效应室温迁移率与最广泛报道的未经处理的四烯和五苯薄膜晶体管的值相当。器件性能与表面形貌密切相关，并讨论了有机薄膜的结构特性。
The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.