3D Simulation Investigating ZnO NWFET Characteristics
3D Simulation Investigating ZnO NWFET Characteristics
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DOI：
10.4028/www.scientific.net/jnanor.58.40
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发表时间：
2019-06
影响因子：
1.7
通讯作者：
N. Ditshego;S. M. Sultan
中科院分区：
文献类型：
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作者：
N. Ditshego;S. M. Sultan
进行了三维仿真，并与制备的ZnO NWFET进行了比较。该器件具有以下电输出特性：漏极电压为1.0 V时迁移率值为10.0 cm2/Vs，阈值电压为24 V，阈下斜率（SS）为1500 mV/ 10年。仿真结果表明，器件输出结果受两个主要问题的影响：(i)接触电阻（Rcon≈11.3 MΩ）和（ii）界面态捕获电荷数密度（QIT = 3.79 x 1015 cm-2）。QIT是由两个参数加在一起的高斯分布推导出来的。这些参数是：类受体指数带尾函数gGA(E)和类受体高斯深态函数gTA(E)。通过去嵌入接触电阻，模拟能够产生126.9 cm2/Vs的优异场效应迁移率，从而改进器件。
3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.