Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields
Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields
复制标题
通过电场控制磁性纳米点中斯格明子数量的切换
DOI：
10.1002/adma.202107908
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发表时间：
2022-02-04
影响因子：
29.4
通讯作者：
Liu, Jun-ming
中科院分区：
文献类型：
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作者：
Hou, Zhipeng;Wang, Yadong;Liu, Jun-ming
磁skyrmions是拓扑旋转自旋配置，有望建立未来的磁存储器和逻辑电路。Skyrmion设备通常依赖于单个Skyrmion的电气操作，但可控地操纵一组Skyrmion可以导致更紧凑和更高效的设备。本文报道了纳米结构铁磁/铁电多铁性异质结构中skyrmion团簇的电场驱动级联跃迁，这种级联跃迁允许skyrmion数目以一个接一个的方式连续多级跃迁.最值得注意的是，这种转换是非易失性和可逆的，这对于多位存储器应用至关重要。结合实验和理论模拟表明，skyrmion团簇的开关是由界面Dzyaloshinskiii-Moriya相互作用和有效单轴各向异性的应变介导的修改引起的。这些结果不仅为构建低功耗，非易失性和多位skyrmion器件开辟了新的方向，而且还为skyrmion簇的电压操纵的基础物理提供了有价值的见解。
Magnetic skyrmions are topological swirling spin configurations that hold promise for building future magnetic memories and logic circuits. Skyrmionic devices typically rely on the electrical manipulation of a single skyrmion, but controllably manipulating a group of skyrmions can lead to more compact and memory‐efficient devices. Here, an electric‐field‐driven cascading transition of skyrmion clusters in a nanostructured ferromagnetic/ferroelectric multiferroic heterostructure is reported, which allows a continuous multilevel transition of the number of skyrmions in a one‐by‐one manner. Most notably, the transition is non‐volatile and reversible, which is crucial for multi‐bit memory applications. Combined experiments and theoretical simulations reveal that the switching of skyrmion clusters is induced by the strain‐mediated modification of both the interfacial Dzyaloshinskii–Moriya interaction and effective uniaxial anisotropy. The results not only open up a new direction for constructing low‐power‐consuming, non‐volatile, and multi‐bit skyrmionic devices, but also offer valuable insights into the fundamental physics underlying the voltage manipulation of skyrmion clusters.