Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)
Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)
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DOI：
10.1109/tcpmt.2013.2279688
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
I. Ndip;K. Zoschke;K. Lobbicke;M. Wolf;S. Guttowski;H. Reichl;K. Lang;H. Henke
中科院分区：
文献类型：
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作者：
I. Ndip;K. Zoschke;K. Lobbicke;M. Wolf;S. Guttowski;H. Reichl;K. Lang;H. Henke
在本文中，分析，数值和测量为基础的方法提取的电阻，电感，电容和电导的硅通孔（TSV）进行分类，量化，并从100 MHz到100 GHz的比较。这些方法背后的假设进行了深入的分析，从他们的准确性/有效性的限制被定义。在此基础上，提出了在所研究的频率范围内最可靠的方法。TSV的设计，制造和测量。从测量和电磁场模拟中提取的TSV的电参数之间获得非常好的相关性。
In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.