SURFACE MORPHOLOGY AND X-RAY DIFFRACTION ANALYSIS FOR SILICON NANOCRYSTAL-BASED HETEROSTRUCTURES
SURFACE MORPHOLOGY AND X-RAY DIFFRACTION ANALYSIS FOR SILICON NANOCRYSTAL-BASED HETEROSTRUCTURES
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硅纳米晶异质结构的表面形貌和 X 射线衍射分析
DOI：
10.1142/s0218625x13500467
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
E. Salim
中科院分区：
文献类型：
--
作者：
E. Salim
在这项工作中，我们研究了快速热氧化工艺对硅纳米晶基异质结构的结构和表面形貌的影响。采用PLD技术结合快速热氧化工艺形成多层异质结构。结果表明，表面粗糙度和结构的氧化温度的依赖性。在723 K氧化温度下获得了最佳的表面形貌，X射线衍射结果表明，在（111）和（002）衍射面处形成了具有均匀多孔表面的Cu2O相。
In this work, we studied the effect of rapid thermal oxidation process on the structural and surface morphology of silicon nanocrystal-based heterostructures. PLD technique was employed in combination with rapid thermal oxidation process to form multilayers heterostructures. Results show the dependence of the surface roughness and structure on the oxidation temperature. Best surface morphology was achieved at 723 K oxidation temperature, at which, the X-ray diffraction result ensured the formation of the Cu2O phase at (111) and (002) diffraction plain with uniform porous surface.