Accurate Circuit Performance Prediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly Reliable ULSI Circuits
Accurate Circuit Performance Prediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly Reliable ULSI Circuits
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高可靠ULSI电路NBT受力器件的精确电路性能预测模型和寿命预测方法
DOI：
10.1109/icicdt.2006.220826
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Tadahiro Ohmi
中科院分区：
文献类型：
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作者：
R. Kuroda;Kazufumi Watanabe;A. Teramoto;Michihiko Mifuji;T. Yamaha;S. Sugawa;Tadahiro Ohmi
本文提出了一种准确的电路级预测模型，用于预测由于负偏压温度（NBT）应力而导致的性能下降，以及器件寿命预测方法。所提出的模型由阈值电压 (Vth) 偏移和漏极电流 (ID) 降低模型组成。开发的模型被纳入紧凑的 MOSFET 模型中，以便我们可以直接将器件电气退化与电路仿真联系起来。 pMOSFET 应力前后 I-V 特性的实验结果证实了所开发模型的有效性。然后，对199级环形振荡器的波形和振荡频率进行电路性能预测。实验结果和预测结果之间取得了很好的一致性。由于只有合适的加速方法才能开发出准确的模型，因此还开发了使用冷孔的新负偏压温度不稳定性（NBTI）加速方法。最后，我们展示了使用该方法准确的 NBTI 寿命预测
An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NBT) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reduction models. The developed models are incorporated into a compact MOSFET model so that we can directly link the device electrical degradation to the circuit simulation. The validity of the developed models is confirmed by the experimental results of I-V characteristics of pMOSFET before and after stress. Then, the circuit performance prediction is carried out for a 199-stage ring oscillator on its waveform and oscillation frequency. Excellent agreements between experimental results and predicted results are obtained. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. Finally, we demonstrate the accurate NBTI lifetime prediction using the method