Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.
Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.
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DOI：
10.1021/nl400902v
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发表时间：
2013-06
期刊：
影响因子：
10.8
通讯作者：
Yijin Zhang;Jianting Ye;Yohei Yomogida;T. Takenobu;T. Takenobu;Y. Iwasa
中科院分区：
文献类型：
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作者：
Yijin Zhang;Jianting Ye;Yohei Yomogida;T. Takenobu;T. Takenobu;Y. Iwasa
二硫化钼（MoS 2）由于其高迁移率和圆二色性而受到关注。作为将这些优点合并到单个器件中的关键一步，我们提出了一种方法，该方法以电子方式控制和定位液栅双极型MoS 2晶体管中的p-n结。形成了与偏置无关的p-n结，并表现出整流I-V特性。这种p-n二极管可以在光电谷电子器件的发展中发挥至关重要的作用。
Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.