Scattering-induced dephasing of many-particle transitions in semiconductor quantum dots
Scattering-induced dephasing of many-particle transitions in semiconductor quantum dots
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DOI：
10.1007/s00340-015-6296-5
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发表时间：
2016-01-01
影响因子：
2.1
通讯作者：
Jahnke, Frank
中科院分区：
文献类型：
--
作者：
Florian, Matthias;Steinhoff, Alexander;Jahnke, Frank
我们研究了由于散射过程而导致的半导体量子点中多粒子态之间跃迁的均匀线宽。由于载流子-载流子库仑相互作用和载流子-LO-声子相互作用而产生的与载流子密度相关的散射率在非微扰水平上获得，并与量子点多粒子配置的冯诺依曼-林德布拉德方程相关联，从而可以识别多粒子状态之间跃迁的相移。对于不同的点几何形状，我们讨论了高能量子点润湿层分离对库仑和 LO 声子贡献的影响。
We study the homogeneous linewidth of transitions between many-particle states in semiconductor quantum dots due to scattering processes. Carrier-density-dependent scattering rates due to carrier-carrier Coulomb interaction and carrier-LO-phonon interaction are obtained on a non-perturbative level and connected to a von Neumann-Lindblad equation for the quantum-dot many-particle configurations, allowing to identify the dephasing of transitions between many-particle states. For different dot geometries, we discuss implications of energetic quantum-dot wetting-layer separation on Coulomb and LO-phonon contributions.