Measurement of mismatch factor and noise of SRAM PUF using small bias voltage
Measurement of mismatch factor and noise of SRAM PUF using small bias voltage
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使用小偏置电压测量 SRAM PUF 的失配系数和噪声
DOI：
10.1109/icmts.2017.7954264
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
H. Shinohara
中科院分区：
文献类型：
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作者：
Ziyang Cui;B. Zheng;Yanhao Piao;Shiyu Liu;Ronghao Xie;H. Shinohara
采用带偏置电压输入的256位SRAM PUF测试结构，测量了SRAM位单元的失配因子和影响其上电状态的噪声因子。利用上电状态的概率提取由σn （σ噪声电压）归一化的失配因子。通过将偏移偏置电压和重复评估相结合，得到了实际SRAM的整个256位失配因子，且修改很小。测量数据表明，噪声系数和失配系数分别在±3.5σ和±2.9σ范围内服从高斯分布。
Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.