Performance of InAsSb-based infrared detectors with nBn design
Performance of InAsSb-based infrared detectors with nBn design
复制标题
采用 nBn 设计的 InAsSb 基红外探测器的性能
DOI：
10.1117/12.862295
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发表时间：
2010
期刊：
影响因子：
1.6
通讯作者：
S. Krishna
中科院分区：
文献类型：
--
作者：
S. Myers;A. Khoshakhlagh;J. Mailfert;P. Wanninkhof;E. Plis;M. N. Kutty;H. Kim;N. Gautam;B. Klein;E. Smith;S. Krishna
我们的小组正在研究基于体InAs(1-x)Sb(x)吸收体(n)和AlAs(1-x)Sb(x)势垒(B)接触(n)的nBn探测器。宽带隙阻挡材料相对于窄带隙吸收材料表现出较大的导带偏移和较小的价带偏移。在本设计中需要探索的一个重要问题是势垒参数（材料、成分和掺杂浓度）以及它们如何影响器件的操作。本文研究了不同成分和掺杂水平的AlAs(1-x)Sb(x)势垒及其对探测器特性的影响，特别是暗电流密度、响应率和比探测率。
Our group is investigating nBn detectors based on bulk InAs(1-x)Sb(x) absorber (n) and contacts (n) with an AlAs(1-x)Sb(x) barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs(1-x)Sb(x) barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.