CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects
CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects
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DOI：
10.1016/j.solmat.2023.112289
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发表时间：
2023-06
影响因子：
6.9
通讯作者：
M. Scarpulla;B. McCandless;A. Phillips;Yanfa Yan;M. Heben;C. Wolden;G. Xiong;W. Metzger;Dan Mao;D. Krasikov;I. Sankin;S. Grover;A. Munshi;W. Sampath;J. Sites;Alexandra M. Bothwell;D. Albin;M. Reese;A. Romeo;M. Nardone;R. Klie;J. M. Walls;T. Fiducia;A. Abbas;S. M. Hayes
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文献类型：
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作者：
M. Scarpulla;B. McCandless;A. Phillips;Yanfa Yan;M. Heben;C. Wolden;G. Xiong;W. Metzger;Dan Mao;D. Krasikov;I. Sankin;S. Grover;A. Munshi;W. Sampath;J. Sites;Alexandra M. Bothwell;D. Albin;M. Reese;A. Romeo;M. Nardone;R. Klie;J. M. Walls;T. Fiducia;A. Abbas;S. M. Hayes
碲化镉 (CdTe) 电池已成为领先的商业化薄膜光伏技术，本质上比硅技术具有更好的温度系数、能量产量和降解率。全球安装了超过 30 GW 峰值 (GWp) 的 CdTe 模块，多家公司正在生产，模块的运输效率高达 18.6%，实验室电池效率高于 22%。我们回顾了过去十年左右科学技术的发展。这些成就得益于制造创新和扩展模块生产，以及通过窗口层优化和合金 CdSexTe1-x(CST) 吸收器最大化光电流。改进的氯钝化工艺、薄膜微观结构和偶然的硒缺陷钝化显着提高了少数载流子寿命。铜掺杂和砷掺杂的 CST 电池的效率均已达到 >22%。进一步提高效率的途径主要取决于通过材料、制造方法和器件堆栈的创新来提高开路电压 (Voc) 和填充因子 (FF)。用砷掺杂取代长期存在的铜掺杂可带来更好的模块稳定性，并正在转化为大规模生产。为了实现 25% 的效率和 >1 V Voc，需要进行研究和开发以将少数载流子寿命提高到 100 ns 以上，减少晶界和界面复合，并定制前后界面的能带图。其中许多目标都是单独实现的，但迄今为止，使用可扩展的制造方法将它们组合在一起还难以实现。我们回顾了这一卓越光伏技术的这些成就和杰出机遇。
Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSexTe1-x(CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (Voc) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V Voc, research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.