Mechanism for disorder on GaAs(001)-(2 x 4) surfaces.
Mechanism for disorder on GaAs(001)-(2 x 4) surfaces.
复制标题
GaAs(001)-(2 x 4) 表面无序的机制。
DOI：
10.1103/physrevlett.76.3344
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发表时间：
1996
影响因子：
8.6
通讯作者：
Jones
中科院分区：
文献类型：
--
作者：
Avery;Goringe;Holmes;Sudijono;Jones
基于扫描隧道显微镜结果和紧结合计算提出了原子模型，该模型解释了分子束外延生长的 GaAs(001)-(2{times}4) 表面上的无序现象。计算表明，(2{times}4) 晶胞中缺失的二聚体沟槽中的空 Ga 位点被 As 占据，导致二聚体行中以扭结形式出现表面无序。无序表面在能量上有利于高达 0.25 单层的一系列额外 As 覆盖。 {版权} {ital 1996 美国物理学会。}
An atomistic model is presented based on scanning tunneling microscopy results and tight binding calculations which explains the observation of disorder on the GaAs(001)-(2{times}4) surface grown by molecular beam epitaxy. Calculations show that occupation by As of vacant Ga sites in the missing dimer trenches of the (2{times}4) unit cell is responsible for the surface disorder in the form of kinks in the dimer rows. The disordered surface is energetically favorable for a range of additional As coverage up to 0.25 monolayer. {copyright} {ital 1996 The American Physical Society.}