Preparation of near-1-µm-thick {100}-oriented epitaxial Y-doped HfO<sub>2</sub> ferroelectric films on (100)Si substrates by a radio-frequency magnetron sputtering method
Preparation of near-1-µm-thick {100}-oriented epitaxial Y-doped HfO<sub>2</sub> ferroelectric films on (100)Si substrates by a radio-frequency magnetron sputtering method
复制标题
射频磁控溅射法在(100)Si衬底上制备近1 µm厚{100}取向外延Y掺杂HfO<sub>2</sub>铁电薄膜
DOI：
10.2109/jcersj2.20019
复制
发表时间：
2020
影响因子：
1.1
通讯作者：
and Hiroshi Funakubo
中科院分区：
文献类型：
--
作者：
Reijiro Shimura;Takanori Mimura;Takao Shimizu;Yoshitomo Tanaka;Yukari Inoue;and Hiroshi Funakubo
