GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
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DOI：
10.1063/1.125126
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发表时间：
1999-10
影响因子：
4
通讯作者：
J. Héroux;Xiaodong Yang;Wei Wang
中科院分区：
文献类型：
--
作者：
J. Héroux;Xiaodong Yang;Wei Wang
我们展示了一个基于gaas的p-i-n谐振腔增强（RCE） GaInNAs光电探测器，工作在1.3 μm附近。利用转移矩阵法对器件设计进行了优化，并从无谐振腔生长的p-i-n结构中获得了实验吸收光谱。采用GaAs/AlAs分布布拉格反射体作为顶、底反射镜，在一次生长步骤中制备了RCE光电探测器。在全宽度为11 nm时获得了72%的量子效率。
We demonstrate a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GaInNAs photodetector operating near 1.3 μm. The device design was optimized using a transfer matrix method and experimental absorption spectra obtained from p-i-n structures grown without a resonant cavity. The RCE photodetector was fabricated in a single growth step by using GaAs/AlAs distributed Bragg reflectors for the top and bottom mirrors. A 72% quantum efficiency was obtained with a full width at half maximum of 11 nm.