Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials
Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials
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DOI：
10.1143/jjap.38.1098
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发表时间：
1999-02-01
期刊：
影响因子：
--
通讯作者：
Hasegawa, H
中科院分区：
文献类型：
--
作者：
Hasegawa, H
回顾了理解和控制 InP 及相关材料上肖特基势垒高度 (SBH) 的各种方法的现状。首先，对费米能级钉扎模型进行了简要概述。然后，通过(1)绝缘体中间层的形成、(2)半导体中间层的形成、(3)硫和硒表面处理来控制SBH。从SBH增加的机理、达到的SBH值、过程的可控性和再现性以及势垒可靠性的角度讨论了(4)低温金属沉积、(5)等离子体表面处理和(6)电化学沉积。特别强调了作者小组最近开发的原位电化学过程，其中似乎消除了费米能级钉扎。
The present status of the various approaches to understand and control Schottky barrier heights (SBHs) on InP and related materials is reviewed. First, a brief survey on the models of Fermi level pinning is given. Then, approaches of SBH control by (1) formation of insulator interlayers, (2) formation of semiconductor interlayers, (3) sulphur and selenium surface treatments. (4) low-temperature metal deposition, (5) plasma surface treatments, and (6) electrochemical deposition are discussed from the viewpoints of the mechanism of SBH increase, the SBH values achieved, the controllability and reproducibility of the process, and the barrier reliability A particular emphasis is placed on the in-situ electrochemical process recently developed by the author's group where Fermi level pinning seems to be removed.