Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes
Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes
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DOI：
10.1016/j.crci.2008.01.014
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发表时间：
2008-09-01
影响因子：
1.6
通讯作者：
Etcheberry, Amaud
中科院分区：
文献类型：
--
作者：
Girard, Hugues A.;Simon, Nathalie;Etcheberry, Amaud
本文研究了掺硼金刚石电极的平带电位位置和表面化学。在 H(2)SO(4) 中对沉积电极进行连续温和的阳极处理。从莫特-肖特基图中，可以监测平带电势 (V(FB)) 的演变，在表面氧化过程中，根据阳极库仑电荷，依次呈现负向然后正向变化。由于 X 射线光电子能谱 (XPS) 的表面表征，V(FB) 的这种特殊演变与表面特定氧官能团的演变有关。虽然文献中的总体趋势是将 V(FB) 位移与氧化末端的生成联系起来，但本研究中提出的结果表明 V(FB) 对羟基或醚基团具有高度敏感性。
This paper deals with a study about the position of the flat-band potential and the surface chemistry of boron-doped diamond electrodes. Successive and mild anodic treatments have been performed on as-deposited electrodes, in H(2)SO(4). From Mott-Schottky plots, flat-band potential (V(FB)) evolution has been monitored, exhibiting successively negative then positive shifts during surface oxidation, depending on the anodic coulometric charge. Thanks to surface characterization by X-ray Photoelectron Spectroscopy (XPS), this particular evolution of V(FB) has been related to the evolution of specific oxygen functionalities at the surface. While the general trends in the literature is to associate the V(FB) displacement with the generation of oxygenated terminations, the results presented in this study exhibit the high sensitivity of V(FB) to hydroxyl or ether groups.