Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy
Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy
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DOI：
10.1088/0022-3727/40/4/025
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发表时间：
2007-02
期刊：
影响因子：
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通讯作者：
R. Hao;Ying-qiang Xu;Zhiqiang Zhou;Z. Ren;H. Ni;Zhenhong He;Zhichuan Niu
中科院分区：
文献类型：
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作者：
R. Hao;Ying-qiang Xu;Zhiqiang Zhou;Z. Ren;H. Ni;Zhenhong He;Zhichuan Niu
用分子束外延法在GaAs（0 0 1）上生长了1 μ m厚的GaSb层。采用X射线双晶衍射、原子力显微镜、霍尔测量和光致发光光谱等手段研究了生长条件对薄膜的晶体质量、表面形貌、电学性能和光学性能的影响。结果发现，表面粗糙度和空穴迁移率是高度依赖于锑镓流量比和生长温度。GaSb层的结晶质量，电学性质和光学性质也被研究作为生长速率的函数，并且发现适当低的生长速率对于结晶质量和电学和光学性质是有益的。在0.25 µm h−1的生长速率下，获得了具有0.1 nm最小均方根表面粗糙度和良好光学特性的更好晶体质量的GaSb层。
GaSb 1 µm-thick layers were grown by molecular beam epitaxy on GaAs (0 0 1). The effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray diffraction, atomic force microscopy, Hall measurement and photoluminescence spectroscopy, respectively. It was found that the surface roughness and hole mobility are highly dependent on the antimony-to-gallium flux ratios and growth temperatures. The crystalline quality, electrical properties and optical properties of GaSb layers were also studied as functions of growth rate, and it was found that a suitably low growth rate is beneficial for the crystalline quality and electrical and optical properties. Better crystal quality GaSb layers with a minimum root mean square surface roughness of 0.1 nm and good optical properties were obtained at a growth rate of 0.25 µm h−1.