Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
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DOI：
10.1063/1.125189
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发表时间：
1999-11
影响因子：
4
通讯作者：
K. Wong;X. Zhou;F. C. Au;H. Lai;Chun‐Sing Lee;S. Lee
中科院分区：
文献类型：
--
作者：
K. Wong;X. Zhou;F. C. Au;H. Lai;Chun‐Sing Lee;S. Lee
采用热丝辅助化学气相沉积法，以固体硅和碳源制备硅基底上的碳化硅（SiC）纳米线。电流-电压特性表明，SiC 纳米线表现出良好的场发射特性。由于易于制备，这些碳化硅纳米线在电子场致发射器件领域具有巨大的潜力。
Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current–voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices.