Optimization of active surface area of flower like MoS2 using V-doping towards enhanced hydrogen evolution reaction in acidic and basic medium
Optimization of active surface area of flower like MoS2 using V-doping towards enhanced hydrogen evolution reaction in acidic and basic medium
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DOI：
10.1016/j.apcatb.2019.04.028
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发表时间：
2019-10-05
影响因子：
22.1
通讯作者：
Kuila, Tapas
中科院分区：
文献类型：
--
作者：
Bolar, Saikat;Shit, Subhasis;Kuila, Tapas
二维层状过渡金属二硫属化合物（TMDS）作为廉价的析氢电催化剂具有巨大的潜力。对TMDS的晶体结构和电子结构进行修饰是提高其催化性能的有效途径。本文中，使用通俗的溶剂热方法来制备钒（V）掺杂的MoS 2（VMSd）。结构、形态和化学分析证实了高纯度和均匀的VMSd纳米花的形成。通过调节V含量，MoS 2催化剂的析氢活性得到了提高。从极化曲线可以明显看出，VMSd分别需要194和206 mV的低过电位才能在酸性和碱性介质中达到10 mA cm（-2）的基准电流密度。Mott-Schottky分析表明，V掺杂后，MoS 2的平带电位不同，导致电极-电解质界面的电荷转移能力改变。优化的V掺杂使费米能级向导带方向移动，有效地改变了能带结构。
Two dimensional layered transition metal dichalcogenides (TMDS) have immense potential as inexpensive electro-catalyst for hydrogen evolution reaction (HER). Modification of crystal and electronic structure is a promising strategy to enhance the catalytic performance of TMDS. Herein, a colloquial solvothermal method was used to prepare the vanadium (V) doped MoS2 (VMSd). The structural, morphological and chemical analysis confirmed the formation of highly pure and uniform VMSd nanoflower. Tuning of V content in MoS2 successively improved its catalytic activity towards hydrogen evolution reaction (HER). As, evident from the polarization curve, the VMSd required low overpotential of 194 and 206 mV to achieve benchmarking current density of 10 mA cm(-2) in acidic and basic medium, respectively. Mott-Schottky analysis suggested that the flat band potential of MoS2 differed upon V-doping, resulting in alteration of charge transfer ability at the electrode-electrolyte interface. The Fermi level shifted towards the conduction band with optimized V-doping and the band structure got modified effectively.