Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature
Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature
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金诱导层交换结晶在绝缘体上低温形成大晶粒Ge(111)薄膜
DOI：
10.1149/05009.0475ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T. Sadoh
中科院分区：
文献类型：
--
作者：
J.-H. Park;T. Suzuki;M. Kurosawa;M. Miyao;T. Sadoh
研究了低温（≤ 350o C）绝缘体上取向控制的大晶粒（< 10 μm）Ge晶体的形成技术，以实现先进的柔性电子器件。此前，我们提出了金诱导结晶技术，并演示了Ge在绝缘体上的低温结晶（250 o C）。在本研究中，我们有意在金和 a-Ge 层之间插入薄 Al2O3 层，以控制晶体成核。因此，通过优化界面氧化层厚度，在350 o C下获得了（111）取向的大晶粒（< 20 μm）Ge晶体。据推测，这种现象归因于 Au 薄膜中 Ge 的随机块体成核的抑制以及由此导致的 Ge/SiO2 界面处的界面成核的主导。
A formation technique of orientation-controlled large-grain (< 10 μm) Ge crystals on insulator at low temperature (≤ 350o C) has been investigated to realize advanced flexible electronics. Previously, we proposed a gold-induced crystallization technique, and demonstrated low temperature crystallization (250 o C) of Ge on insulator. In the present study, we intentionally inserted thin Al2O3 layers between gold and a-Ge layer, to control crystal nucleation. Consequently,(111)-oriented large-grain (< 20 μm) Ge crystals are obtained at 350 o C by optimizing interfacial oxide layer thickness. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films and resultant dominance of interfacial nucleation at Ge/SiO2 interfaces.