Doping effect on the dielectric property in bismuth titanate
Doping effect on the dielectric property in bismuth titanate
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DOI：
10.1063/1.1649456
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发表时间：
2004-03
影响因子：
3.2
通讯作者：
Y. Yao;C. Song;P. Bao;D. Su;X. Lu;J. Zhu;Y. Wang
中科院分区：
文献类型：
--
作者：
Y. Yao;C. Song;P. Bao;D. Su;X. Lu;J. Zhu;Y. Wang
从室温到 350 °C，系统地研究了掺杂 Bi4Ti3O12 [Bi4−xLaxTi3O12 (x=0.5,0.75,1) 和 Bi4−y/3Ti3−yNbyO12 (y=0.015,0.03,0.06)] 的介电性能，并辅以机械测量（内摩擦）。在 Bi4Ti3O12 (BiT) 的介电损耗与温度的关系图中，证实弛豫峰与氧空位的运动有关。研究发现，A位La掺杂有利于疲劳性能的提高，而B位Nb掺杂则主要增强剩余极化强度。 BiT中钙钛矿型单元A位适当的La掺杂通过提高跳跃势垒的高度来增强氧空位的化学稳定性，并通过改变域结构来增强域的迁移率。而B位Nb掺杂可以引起氧八面体的畸变，通过补偿效应降低氧空位浓度，从而增强...
The dielectric property complemented by the mechanical measurement (internal friction) in the doped Bi4Ti3O12 [Bi4−xLaxTi3O12 (x=0.5,0.75,1) and Bi4−y/3Ti3−yNbyO12 (y=0.015,0.03,0.06)] was systematically investigated from room temperature to 350 °C. In the plot of dielectric loss versus temperature for Bi4Ti3O12 (BiT), a relaxation peak was confirmed to be associated with the motion of the oxygen vacancy. It is found that the La doping at site A is in favor of improvement of the fatigue property, in contrast, the Nb doping at site B can mainly enhance the remanent polarization. Appropriate La doping at site A of perovskite-type unit in BiT enhances the chemical stability of oxygen vacancy by improving the height of the potential barrier for hopping and enhances the mobility of domain by the changing of domain structures. While the Nb doping at site B could induce the distortion of oxygen octahedral and reduce the oxygen vacancy concentration by a compensating effect so that it results in an enhancement of...