Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors
Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors
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DOI：
10.1149/1.2186427
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发表时间：
2006-01-01
影响因子：
--
通讯作者：
Kim, H
中科院分区：
文献类型：
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作者：
Maeng, WJ;Kim, H
我们研究了钽和钛氧化物从代表性烷基酰胺前体Ta（NMe 2）（5）（五（二甲氨基）Ta，PDMAT）和Ti（NMe 2）（4）[四（二甲氨基）Ti，TDMAT]的热和等离子体增强原子层沉积（PE-ALD）。采用水或氧等离子体的PDMAT对Ta 2 O 5进行ALD，得到了具有良好自饱和生长特性的纯Ta 2 O 5薄膜。然而，观察到不完全的自饱和从TDMAT的TiO 2 ALD。薄膜的性能，包括微观结构，化学成分，和电气性能进行了讨论，侧重于热和PE-ALD工艺的两种氧化物之间的比较研究。结果表明，PDMAT是一种很有前途的前驱体热和PE-ALD的Ta 2 O 5。
We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta(NMe2)(5) (pentakis(dimethylamino)Ta, PDMAT) and Ti(NMe2)(4) [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2O5 by PDMAT with water or oxygen plasma produced pure Ta2O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for TiO2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2O5.