Polysilicon: a versatile material for microsystems
Polysilicon: a versatile material for microsystems
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DOI：
10.1016/s0924-4247(01)00876-7
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发表时间：
2002-04-30
影响因子：
4.6
通讯作者：
French, PJ
中科院分区：
文献类型：
--
作者：
French, PJ
多晶硅最初的吸引力在于它能够在各种衬底上存款半导体层。这导致了多晶硅栅极MOS、多晶硅发射极和一系列无源器件的发展。在传感器和执行器领域，基于压阻效应的应变传感器是最早成功的应用之一。然而，这可能是表面微加工的发展，这受到了最多的关注。在氧化物上存款多晶硅的能力意味着可以制造独立结构，这导致了广泛的成功器件。多晶硅具有包括小的单晶晶粒的结构，所述小的单晶晶粒具有由薄晶粒边界分隔的许多取向。这些晶粒的尺寸高度依赖于加工，因此可以实现广泛的电气和机械性能。这产生了更大的灵活性，但这种对工艺参数的敏感性可能导致获得稳定工艺的问题。本文将回顾多晶硅的发展，它的结构，制造和机械和电气性能。(C)2002 Elsevier Science B.V.保留所有权利。
The initial attraction of polysilicon was the ability to deposit semiconductor layers on a wide range of substrates. This leads to the development of polysilicon gate MOS, polysilicon emitters and a range of passive devices. In the field of sensors and actuators, the strain sensors, based on piezoresistive effect, was one of the first successful applications. However, it was probably the development of surface micromachining, which received the most attention. The ability to deposit polysilicon on oxide meant that free-standing structures could be fabricated and this has lead to a wide range of successful devices. Polysilicon has a structure comprising small single-crystal grains with many orientations separated by thin grain boundaries. The size of these grains is highly dependent upon processing and therefore a wide range of electrical and mechanical properties can be achieved. This yields greater flexibility but this sensitivity to process parameters can lead to problems in obtaining a stable process. This paper will look back at the development of polysilicon, its structure, fabrication and both mechanical and electrical properties. (C) 2002 Elsevier Science B.V. All rights reserved.