Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures
Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures
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DOI：
10.1063/1.2817255
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发表时间：
2007-12
影响因子：
3.2
通讯作者：
Jinsu Zhang;Lide Zhang;L. Zhu;Yuzhi Zhang;Meilin Liu;Xuefei Wang;G. He
中科院分区：
文献类型：
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作者：
Jinsu Zhang;Lide Zhang;L. Zhu;Yuzhi Zhang;Meilin Liu;Xuefei Wang;G. He
采用射频反应溅射法制备氮氧化锌薄膜，并对其进行退火处理，制备了氮掺杂氧化锌薄膜。在274和580 cm-1处观察到两个拉曼峰。根据这两个峰的积分强度的变化，得到了在500 °C [活化温度（AT）]下的氮活化。在AT以下，它们的积分强度表现出不同的变化趋势。X射线光电子能谱（XPS）分析表明，它们的N化学状态发生了变化，并发现了活化的Zn-N键。通过光致发光光谱和椭圆偏振光谱对样品进行了分析。活化的样品在室温下在3.22 eV处表现出被指定为AX 0发射的对称发射峰。SE研究考虑了不同温度范围内的样品除以AT。讨论了氮掺杂（N）O和外延生长等因素对吸收边红移的影响。
N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm−1. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 °C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the AX0 emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N)O and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.