Nano cluster assisted high rate epitaxy of silicon by mesoplasma CVD
Nano cluster assisted high rate epitaxy of silicon by mesoplasma CVD
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DOI：
10.1016/j.surfcoat.2006.07.117
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发表时间：
2007-02
影响因子：
5.4
通讯作者：
M. Kambara;Y. Hamai;H. Yagi;T. Yoshida
中科院分区：
文献类型：
--
作者：
M. Kambara;Y. Hamai;H. Yagi;T. Yoshida
采用中压等离子体化学气相沉积技术，在700 °C左右的温度下，以60 nm/s的速度沉积了同质外延硅厚膜。在沉积过程中，同时尝试在原位进行X射线散射测量，以捕获等离子体/衬底边界中可能的簇形成。发现向Ar等离子体注入SiH 4气体后，散射强度增加。当获得外延膜时，强度的这种增加是显著的。这些潜在地表明，纳米尺寸的Si团簇形成在边界区域，并有效地促进了高速外延生长。
Homoepitaxial silicon thick films have been deposited by medium pressure plasma chemical vapor deposition at rates as fast as 60 nm/s at temperatures around 700 °C. X-ray scattering measurement was attempted in situ simultaneously during deposition to capture the possible cluster formation in the plasma/substrate boundary. The scattering intensity was found to increase upon injection of SiH4gas to Ar plasma. Such an increase in the intensity was pronounced when the epitaxial films were achieved. These potentially suggest that nano sized Si clusters were formed in the boundary region and contributed effectively to the high rate epitaxial growth.