Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and pi-models up to 110GHz
Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and pi-models up to 110GHz
复制标题
基于 T 模型和 pi 模型组合的高达 110GHz 的 InP 异质结双极晶体管直接参数提取方法
DOI：
10.1088/1361-6641/ab5917
复制
发表时间：
2020
影响因子：
1.9
通讯作者：
Wang Hong
中科院分区：
文献类型：
--
作者：
Zhang Ao;Gao Jianjun;Wang Hong
本文提出了一种确定InP/InGaAs双异质结双极晶体管小信号等效电路模型的参数提取方法。该方法结合了传统的T型和π型等效电路拓扑的优点。所有的等效电路元素只提取解析的S参数数据，没有任何数值优化。在0.1-110 GHz的频率范围内，测量和模型计算的数据之间的协议是优秀的。
A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper. This method combines the advantages of conventional T-and π-type equivalent-circuit topologies. All the equivalent circuit elements are only extracted analytically from S-parameter data without any numerical optimization. The agreements between the measured and the model-calculated data are excellent in the frequency range of 0.1–110 GHz.