Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes
Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes
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DOI：
10.1109/led.2023.3274306
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发表时间：
2023-07-01
影响因子：
4.9
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Kwon, Woong;Kawasaki, Seiya;Amano, Hiroshi
在不同温度范围内研究了无穿透位错（TD）的氮化镓（GaN）垂直p-n二极管的反向漏电机制，并与穿透位错密度（TDD）约为10（6）cm（-2）的p-n二极管的反向漏电机制进行了比较。从400 K开始，反向漏电流随温度的升高而显著增加，主要机理分别由无TD和高TDD p-n二极管的声子发射和Poole-Frenkel发射解释。在高温和高电场下，高TDD p-n二极管的漏电流比无TD p-n二极管高2倍。这些结果表明，垂直GaN器件的性能，特别是在高温和电场下使用时，可以通过去除TD来增强。
The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN) vertical p-n diode was investigated in various temperature range, and it was compared with that of the p-n diode having a threading dislocation density (TDD) of around 10(6) cm(-2). The reverse leakage current was increased markedly by increasing the temperature from 400 K, the dominant mechanism was explained by thermionic and Poole-Frenkel emissions for TD-free and high-TDD p-n diodes, respectively. At high temperatures and electric fields, the leakage current of the high TDD p-n diode showed 2 times higher than the TD-free p-n diode. These results indicate that the performance of vertical GaN devices, especially when employed at high temperatures and electric fields, can be enhanced by removing TDs.