The Low Temperature Catalyzed Chemical Vapor Deposition and Characterization of Silicon Nitride Thin Films
The Low Temperature Catalyzed Chemical Vapor Deposition and Characterization of Silicon Nitride Thin Films
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DOI：
10.1149/1.2069356
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发表时间：
1992-04
影响因子：
3.9
通讯作者：
J. L. Dupuie;E. Gulari;F. L. Terry
中科院分区：
文献类型：
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作者：
J. L. Dupuie;E. Gulari;F. L. Terry
在加热钨丝的催化作用下，在衬底温度为BB 2 ~ 904 K的条件下，通过低压化学气相沉积法生长了氮化硅薄膜。采用加热到2020 K的钨丝分解氨气，氨气与灯丝下游引入的硅烷反应，以50 ~ 250 nm/min的沉积速率形成氮化硅薄膜。采用傅里叶变换红外光谱、X射线光电子能谱（XPS）、扫描电子显微镜（SEM）和椭圆偏振光谱（SE）对所得薄膜进行了表征
Silicon nitride thin films have been grown via low pressure chemical vapor deposition at substrate temperatures ranging from BB2 to 904 K by the catalytic action of a heated tungsten filament. A tungsten filament heated to 2020 K was used to decompose ammonia, which reacted with silane introduced downstream of the filament to form silicon nitride films at deposition rates between 50 and 250 nm/min. The resultant films were characterized by Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and spectroscopic ellipsometry (SE)