Equivalent-circuit modeling of ferroelectric switching devices
Equivalent-circuit modeling of ferroelectric switching devices
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DOI：
10.1063/1.370609
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发表时间：
1999-05
影响因子：
3.2
通讯作者：
Dba Rep;Mwj Menno Prins
中科院分区：
文献类型：
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作者：
Dba Rep;Mwj Menno Prins
铁电开关器件的紧凑等效电路模型源自局部电荷位移的通用模型。一般模型由重复单元矩阵组成，描述局部无耗散电荷位移（静电通道）以及耗散电荷位移（电化学通道），通道由于移动物质的电荷而耦合。铁电电荷位移的导出模型用于模拟磁滞和瞬态特性，并应用于两种器件：(i) 铁电电容器和 (ii) 铁电存储场效应晶体管。该电路在 SPICE 衍生分析软件中进行编程。我们发现，在 Pb(Zr,Ti)O3 陶瓷电容器以及具有 SnO2:Sb 半导体和 Pb(Zr,Ti)O3 铁电绝缘体的薄膜晶体管上获得的实验磁滞数据可以用等效电路模型重现和解释。
A compact equivalent-circuit model for ferroelectric switching devices is derived from a general model for local charge displacements. The general model consists of a matrix of repeat units describing local dissipationless charge displacements (electrostatic channel), as well as dissipative charge displacements (electrochemical channel), the channels being coupled due to the electrical charge of the moving species. The derived model for ferroelectric charge displacements is used to simulate both hysteresis and transient characteristics, and applied to two devices: (i) a ferroelectric capacitor and (ii) a ferroelectric memory field-effect transistor. The circuits are programmed in SPICE-derived analysis software. We find that experimental hysteresis data obtained on Pb(Zr,Ti)O3 ceramic capacitors and on thin-film transistors with a SnO2:Sb semiconductor and a Pb(Zr,Ti)O3 ferroelectric insulator can be reproduced and interpreted with the equivalent-circuit models.