Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers
Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers
复制标题
通过结合原子层沉积 SrO 和化学气相沉积 RuO2 层生长导电 SrRuO3 薄膜
DOI：
--
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. Gatineau
中科院分区：
文献类型：
--
作者：
J. Han;Woongkyu Lee;W. Jeon;Sang Woon Lee;C. Hwang;Changhee Ko;J. Gatineau
在230 °C的低生长温度下，使用Sr（iPr 3Cp）2、RuO 4前体和O2气体，通过依次执行SrO的原子层沉积和RuO 2层的化学气相沉积来沉积SrRuO 3（SRO）膜。通过调节SrO/RuO 2的亚循环比，可以获得较宽的Sr（Ru）浓度范围，并在化学计量比的SRO组分下获得了~ 2.0 nm/超循环的高生长速率。所沉积的SRO膜是非晶的，并且通过在N2环境中在600至700 °C范围内的温度下进行沉积后退火来获得结晶的SRO膜。采用结晶SRO膜作为用于ALD SrTiO 3（STO）膜的原位结晶的种子层，以应用于下一代动态随机存取存储器的电容器。因此，结晶STO膜生长在沉积状态下的结晶SRO上，并且STO膜的介电常数与非晶STO的介电常数相比大大提高，从12提高到44。
SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 °C using Sr(iPr3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 °C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.