Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers
Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers
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DOI：
10.1109/jqe.2018.2869332
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发表时间：
2018-09
影响因子：
2.5
通讯作者：
Yuanlong Fan;K. Shore
中科院分区：
文献类型：
--
作者：
Yuanlong Fan;K. Shore
本文对GaN/（InGaN/GaN多量子阱）/GaN核壳结构的电泵浦半导体纳米激光器（SNL）的光学和热学性质进行了全面的理论研究。数值计算结果表明，该模式的阈值增益为413 cm $^{-1}$。此外，它表明，当它是操作远高于阈值，器件温度仅增加了22 K以上的环境温度为300 K。这些有希望的结果归因于强模式限制在有源区和所提出的结构的材料系统的良好的热性能。本文的结果为电泵浦室温连续可见光SNL的制作提供了指导。
This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm $^{-1}$ . Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.