Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition
Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition
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DOI：
10.1063/1.343718
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发表时间：
1989-12
影响因子：
3.2
通讯作者：
M. Ikeda;K. Kaneko
中科院分区：
文献类型：
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作者：
M. Ikeda;K. Kaneko
采用货车der Pauw-Hall测量法研究了大气压金属有机化学气相沉积法生长的Se和Zn掺杂Ga0.5In0.5P和（Al0.5Ga0.5）0.5In0.5P的室温电学性能。掺杂剂为硒化氢和二甲基锌。样品的制备，使寄生导电GaAs衬底的三元或四元层附近可以从霍尔测量消除。对于两种导电类型，GaInP和AlGaInP的载流子浓度随着掺杂剂进料量的0.8± 0.1次方而增加。在680 °C左右的生长温度下，随着二甲基锌进料量的增加，空穴浓度趋于在1018 cm−3水平附近饱和。载流子浓度随着生长温度的升高而降低，Se掺杂的表观激活能为0.95 eV，Zn掺杂的表观激活能为1.9 eV。第V组与第III组的进料比对载体浓度的影响很小。
Electrical properties of Se‐ and Zn‐doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by atmospheric pressure metalorganic chemical vapor deposition under a wide range of growth conditions were investigated using van der Pauw–Hall measurements at room temperature. The dopants were hydrogen selenide and dimethylzinc. The samples were prepared so that parasitic conduction in the GaAs substrate just adjacent to the ternary or quaternary layers could be eliminated from the Hall measurement. The carrier concentration of GaInP and AlGaInP increased as the 0.8±0.1th power of the feed amount of dopants for both conductivity types. At a growth temperature around 680 °C, the hole concentration tended to saturate near the 1018 cm−3 level as the amount of dimethylzinc being fed increased. The carrier concentration decreased with increasing growth temperature, with apparent activation energies of 0.95 eV for Se doping and 1.9 eV for Zn doping. The group‐V to group‐III feed ratio had a weak influence on the carrier con...