Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition
Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition
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金属有机化学气相沉积法制备钪酸镝薄膜作为替代非晶栅氧化物
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
M. Caymax
中科院分区：
文献类型：
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作者：
Reji Thomas;P. Ehrhart;M. Luysberg;M. Boese;R. Waser;M. Roeckerath;E. Rije;J. Schubert;S. Elshocht;M. Caymax
采用金属有机化学气相沉积技术在Si衬底上制备了氧化镝（DyScO3）薄膜。分别使用了Dy和Sc源前驱体，沉积温度为480 ~ 700℃。薄膜呈非晶状，具有较低的均方根粗糙度（≤2A），且在1050℃退火下稳定。电学表征得到的C-V曲线具有可忽略的滞后（<10mV）、高介电常数（~ 22）和低泄漏电流。DyScO3∕SiOx∕Si叠层的电学性能在800°C时保持稳定；然而，对于特殊化学生长的氧化物薄膜，这一极限增加到900°C，表明适当的扩散屏障进一步改善。
Dysprosium scandate (DyScO3) thin films were deposited on Si substrates using metal-organic chemical vapor deposition. Individual source precursors of Dy and Sc were used and deposition temperatures ranged from 480to700°C. Films were amorphous with low root mean square roughness (⩽2A) and were stable up to 1050°C annealing. Electrical characterization yielded C-V curves with negligible hysteresis (<10mV), high dielectric constant (∼22), and low leakage currents. The electrical properties of the DyScO3∕SiOx∕Si stacks were stable up to 800°C for films on native oxide; however, this limit increased to 900°C for films on special chemically grown oxide, suggesting further improvement with proper diffusion barrier.