Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.
Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.
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DOI：
10.1021/am302378v
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发表时间：
2012-12
影响因子：
9.5
通讯作者：
Qike Jiang;He Zheng;Jianbo Wang;H. Long;G. Fang
中科院分区：
文献类型：
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作者：
Qike Jiang;He Zheng;Jianbo Wang;H. Long;G. Fang
分别在GaN和Si衬底上生长了ZnO/Mg（x）Zn（1-x）O（ZnO/MZO）多量子威尔斯（MQW）结构的激光二极管（LD）。在电激发下，多量子阱/GaN半导体激光器表现出紫外随机激射，而多量子阱/Si半导体激光器则没有。在MQWs/Si中，ZnO/MZO MQWs由纳米尺度的微晶组成，并且MZO层经历立方MgO和六方ZnO的相分离。此外，Mg原子主要位于MZO层中，沿着分布，并在ZnO/MZO界面处有明显的聚集;与此形成鲜明对比的是，MQWs/GaN中的ZnO/MZO MQWs具有良好的结晶结构，GaN、MZO和ZnO之间存在外延关系。特别地，观察到Mg扩散到ZnO阱层中。进一步讨论了这两种半导体激光器的结构与光学性质的关系。
Two kinds of laser diodes (LDs) comprised of ZnO/Mg(x)Zn(1-x)O (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.