Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application
Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application
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汽车用耐高温SiC模块封装技术开发
DOI：
10.1109/ectc.2017.103
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Keiji Toda
中科院分区：
文献类型：
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作者：
K. Tatsumi;M. Inagaki;K. Kamei;T. Iizuka;Hiroaki Narimatsu;Nobuaki Sato;K. Shimizu;Kazutoshi Ueda;Akihiro Imakire;M. Hikita;Rikiya Kamimura;K. Sugiura;K. Tsuruta;Keiji Toda
以应用于混合动力汽车和电动汽车的逆变系统为目标，提出了一种基于镍微镀键合（NMPB）技术的新型SiC功率器件封装技术。我们在TO247型封装上实现了SiC肖特基势垒二极管（SBD）的耐热安装，并证实了即使在250°C下高温储存500小时后也能进行整流，没有任何明显的退化。我们还使用新设计的NMPB工艺引线框架制造了安装sdd和mosfet的单腿逆变器模块。该模块即使在高温下（如约250℃）也能显示正常的整流和开关行为。
Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.