Defect Formation in GeO2–SiO2 Glass by UV-excited Poling
Defect Formation in GeO2–SiO2 Glass by UV-excited Poling
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DOI：
10.7567/jjaps.37s1.71
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发表时间：
1998
影响因子：
1.5
通讯作者：
Masahide Takahashi;T. Fujiwara;A. Ikushima
中科院分区：
文献类型：
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作者：
Masahide Takahashi;T. Fujiwara;A. Ikushima
我们报道了用ArF激光激发极化在GeO2-SiO_2玻璃纤维预制棒中形成与Ge有关的中心。通过光吸收测量了诱导缺陷浓度与电场的关系，发现了Ge电子陷阱中心和Ge E‘中心等色心。诱导Ge电子陷阱中心和Ge E‘中心的浓度随着电场的增大而增加。从Ge电子陷阱中心到Ge E‘中心的转换效率与电场无关。这一结果有力地表明，在目前的GeO_2-SiO_2玻璃中，用ArF激光激发的极化对于形成Ge电子陷阱中心是有效的。
We report on formation of Ge-related centers in GeO2-SiO2 glass fiber preform by poling with ArF laser excitation. Electric field dependence of the induced-defect concentrations was measured by means of the optical absorption Several color centers such as the germanium electron-trapped centers and the Ge E' center were induced. Concentrations of the induced germanium electron-trapped centers and Ge E' center increase with increasing the electric field. Conversion efficiency from the germanium electron-trapped centers to the Ge E' center was found to be independent of the electric field. The present result strongly suggests that the polingwith ArF laser excitati on is effective in the present GeO2-SiO2 glass for the formation of germanium electron-trapped centers.