Adduct-based p-doping of organic semiconductors
Adduct-based p-doping of organic semiconductors
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DOI:
10.1038/s41563-021-00980-x
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发表时间:
2021-04-22
期刊:
影响因子:
41.2
通讯作者:
Snaith, Henry J.
中科院分区:
文献类型:
--
作者:
Sakai, Nobuya;Warren, Ross;Snaith, Henry J.
Adducts of dimethyl sulfoxide and hydrobromic acid demonstrate efficient p-doping of various organic semiconductors and compatibility with other counterions used to improve stability and other performance parameters of organic-based optoelectronic devices.Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and low-cost dopants if a widespread transition towards larger-area organic electronic devices is to occur. Here we report dimethyl sulfoxide adducts as p-dopants that fulfil these conditions for a range of organic semiconductors. These adduct-based dopants are compatible with both solution and vapour-phase processing. We explore the doping mechanism and use the knowledge we gain to 'decouple' the dopants from the choice of counterion. We demonstrate that asymmetric p-doping is possible using solution processing routes, and demonstrate its use in metal halide perovskite solar cells, organic thin-film transistors and organic light-emitting diodes, which showcases the versatility of this doping approach.