The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices
The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices
复制标题
DOI：
10.1109/led.2008.2003012
复制
发表时间：
2008-09
影响因子：
4.9
通讯作者：
J. Reifenberg;D. Kencke;Kenneth E. Goodson
中科院分区：
文献类型：
--
作者：
J. Reifenberg;D. Kencke;Kenneth E. Goodson
热传导控制相变存储器 (PCM) 器件的写入时间和能量。最近的测量表明，相变材料与相邻电极和钝化材料的界面处存在很大的热阻。在这封信中，电热模拟量化了这些电阻对复位转换的影响。由于横向温度均匀性增加，编程电流随着边界电阻的增加而强烈减少，而使用相变材料中有效电导率降低的方法无法捕获这种情况。对于 50 m2middotK/GW 的界面电阻，编程电流可从 20% 减少到 30%。热性能的精确空间分布对于 PCM 器件的模拟至关重要。
Thermal conduction governs the writing time and energy of phase-change memory (PCM) devices. Recent measurements demonstrated large thermal resistances at the interfaces of phase-change materials with neighboring electrode and passivation materials. In this letter, electrothermal simulations quantify the impact of these resistances on the set to reset transition. The programming current decreases strongly with increasing boundary resistance due to increased lateral temperature uniformity, which cannot be captured using a reduced effective conductivity in the phase-change material. Reductions in programming current from 20% to 30% occur for an interface resistance of 50 m2middotK/GW. The precise spatial distribution of thermal properties is critical for the simulation of PCM devices.