Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
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多孔硅的电化学Er掺杂及其~1.54 μm的室温发光
DOI：
10.1063/1.112169
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发表时间：
1994
影响因子：
4
通讯作者：
A. Sato
中科院分区：
文献类型：
--
作者：
T. Kimura;A. Yokoi;H. Horiguchi;R. Saito;T. Ikoma;A. Sato
我们提出了一种新的将高浓度Er离子掺杂到多孔硅层中的电化学方法，并在室温下获得了∼为1.54μm的强烈光致发光。在HF/H2O中阳极腐蚀p型硅衬底制备的多孔硅层被浸泡在ErCl3/乙醇溶液中。然后将相对于对铂电极的负偏压施加到样品上。Er3+离子在电场的作用下被吸引到多孔硅层的微孔中。样品在O2/Ar气氛中经∼1300 °C热处理后，在室温下用Ar离子激光激发，在∼1.54μm处表现出尖锐而强烈的Er~(3+)光致发光。
We present a new electro‐chemical method for incorporating high concentration Er ions deep into porous silicon layers and its intense photoluminescence at ∼1.54 μm at room temperature. Porous silicon layers prepared by anodic etching of p‐type silicon substrates in HF/H2O are immersed in ErCl3/ethanol solution. Then the negative bias relative to a counter platinum electrode is applied to the samples. Er3+ ions are drawn into fine pores of the porous silicon layers by the electric field. After thermal annealing at ∼1300 °C in an O2/Ar atmosphere, the samples show sharp and intense Er3+‐related photoluminescence at ∼1.54 μm at room temperature upon excitation with an Ar ion laser.