Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires
Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires
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无缺陷 InAs 纳米线机电特性的取向依赖性
DOI：
10.1021/acs.nanolett.5b04842
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发表时间：
2016
期刊：
影响因子：
10.8
通讯作者：
Zou Jin
中科院分区：
文献类型：
--
作者：
Zheng Kun;Zhang Zhi;Hu Yibin;Chen Pingping;Lu Wei;Drennan John;Han Xiaodong;Zou Jin
了解不同结构的无缺陷纳米线的电学特性及其变形响应对纳米器件和应变工程的设计和应用具有重要意义。在本研究中，采用分子束外延生长无缺陷的锌-闪锌矿和纤锌矿结构的InAs纳米线，并仔细选择具有不同结构和取向的纳米线，并使用透射电子显微镜内的电探测系统研究其电学性能和机电响应。通过精心的实验设计和详细的分析，我们发现了一些非凡的物理现象，例如纳米线的机电特性是由纳米线的取向决定的，而不是其晶体结构。我们的研究结果为不同结构的InAs变形引起的不同响应提供了重要的见解，这对于基于纳米线的器件是重要的。
Understanding the electrical properties of defect-free nanowires with different structures and their responses under deformation are essential for design and applications of nanodevices and strain engineering. In this study, defect-free zinc-blende- and wurtzite-structured InAs nanowires were grown using molecular beam epitaxy, and individual nanowires with different structures and orientations were carefully selected and their electrical properties and electromechanical responses were investigated using an electrical probing system inside a transmission electron microscope. Through our careful experimental design and detailed analyses, we uncovered several extraordinary physical phenomena, such as the electromechanical characteristics are dominated by the nanowire orientation, rather than its crystal structure. Our results provide critical insights into different responses induced by deformation of InAs with different structures, which is important for nanowire-based devices.