Surface Activated Bonding of LiNbO3 and GaN at Room Temperature
Surface Activated Bonding of LiNbO3 and GaN at Room Temperature
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LiNbO3 和 GaN 室温下的表面活化键合
DOI：
10.1149/08605.0207ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Eiji Higurashi and Tanemasa Asano
中科院分区：
文献类型：
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作者：
Ryo Takigawa;Eiji Higurashi and Tanemasa Asano
在这项研究中，我们报告的GaN和LiNbO3（LN）的室温晶片键合使用表面活化键合（SAB）方法。使用含Fe的Ar离子束轰击的改性SAB表现出比使用Ar快原子束轰击的标准SAB更强的GaN和LN的键强度。作为切割测试的结果，使用改进的SAB方法的键合晶片被成功地切割成1× 1mm2的管芯，而没有由于在切割过程中施加的应力而导致的界面脱粘。该结果显示出强的结合强度，其对于器件应用可能是足够的。结果发现，在离子束轰击过程中沉积的Fe纳米层似乎作为粘合剂工作良好，并在LN的负表面和GaN的Ga面之间形成强键。
In this study, we report room-temperature wafer bonding of a GaN and a LiNbO3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1× 1 mm 2 dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.