Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates
Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates
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InAs 衬底上 AlAs0.16Sb0.84 和 Al0.8Ga0.2As0.14Sb0.86 的分子束外延
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
J. Klem
中科院分区：
文献类型：
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作者：
J. Lott;L. Dawson;E. Jones;J. Klem
采用分子束外延技术在（100）InAs衬底上生长了晶格匹配的AlAs 0.16Sb 0.84和Al 0.8Ga 0.2As 0.14Sb 0.86外延薄膜。该材料通过X射线衍射、4K光致发光和电容-电压测量技术进行表征。在300 K时，无意掺杂的AlAsSb和AlGaAsSb外延层的背景受主浓度分别为1.8×1015和1.4×1016 cm-3。用硫掺杂补偿AlAsSb和AlGaAsSb外延层导致高电阻率材料，其有效施主浓度分别约为1014和1015 cm-3。
Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x‐ray diffraction, 4 K photoluminescence, and capacitance‐voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high‐resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.