Effect of RF Isolation of Intrinsic Josephson Junctions Made of Solid Bi-2212 Film for Terahertz Radiation
Effect of RF Isolation of Intrinsic Josephson Junctions Made of Solid Bi-2212 Film for Terahertz Radiation
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由固体 Bi-2212 薄膜制成的本征约瑟夫森结对太赫兹辐射的射频隔离效果
DOI:
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发表时间:
2018
影响因子:
1.8
通讯作者:
T. Uchida
中科院分区:
文献类型:
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作者:
Teppei Uchida;Wataru Kimura;K. Nakajima;T. Tachiki;T. Uchida
This is the first report of terahertz (THz) radiation from intrinsic Josephson junction devices made of solid Bi<sub> 2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+δ</sub> thin films. It is shown that <italic>in situ</italic> laser trimming of the current lead structure could activate initially THz inactive devices. The trimming increased inductive reactance and improved RF isolation of intrinsic Josephson junctions. It is considered that the RF isolation is a key component to maintain a cavity resonance within intrinsic Josephson junctions essential to create THz waves from solid Bi-2212 film IJJ devices.