Scaling law for excitons in 2D perovskite quantum wells.
Scaling law for excitons in 2D perovskite quantum wells.
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DOI:
10.1038/s41467-018-04659-x
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发表时间:
2018-06-08
影响因子:
16.6
通讯作者:
Mohite AD
中科院分区:
文献类型:
--
作者:
Blancon JC;Stier AV;Tsai H;Nie W;Stoumpos CC;Traoré B;Pedesseau L;Kepenekian M;Katsutani F;Noe GT;Kono J;Tretiak S;Crooker SA;Katan C;Kanatzidis MG;Crochet JJ;Even J;Mohite AD
Ruddlesden–Popper halide perovskites are 2D solution-processed quantum wells with a general formula A2A’n-1MnX3n+1, where optoelectronic properties can be tuned by varying the perovskite layer thickness (n-value), and have recently emerged as efficient semiconductors with technologically relevant stability. However, fundamental questions concerning the nature of optical resonances (excitons or free carriers) and the exciton reduced mass, and their scaling with quantum well thickness, which are critical for designing efficient optoelectronic devices, remain unresolved. Here, using optical spectroscopy and 60-Tesla magneto-absorption supported by modeling, we unambiguously demonstrate that the optical resonances arise from tightly bound excitons with both exciton reduced masses and binding energies decreasing, respectively, from 0.221 m0 to 0.186 m0 and from 470 meV to 125 meV with increasing thickness from n equals 1 to 5. Based on this study we propose a general scaling law to determine the binding energy of excitons in perovskite quantum wells of any layer thickness. Hybrid 2D layered perovskites are solution-processed quantum wells whose optoelectronic properties are tunable by varying the thickness of the inorganic slab. Here Blancon et al. work out a general behavior for dependence of the excitonic properties in layered 2D perovskites.
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DOI:
10.1021/acs.jpcc.7b10705
发表时间:
2017-11-30
期刊:
The journal of physical chemistry. C, Nanomaterials and interfaces
影响因子:
--
作者:
Gélvez-Rueda MC;Hutter EM;Cao DH;Renaud N;Stoumpos CC;Hupp JT;Savenije TJ;Kanatzidis MG;Grozema FC
通讯作者:
Grozema FC
影响因子:
3.7
作者:
ISHIHARA, T;TAKAHASHI, J;GOTO, T
通讯作者:
GOTO, T
影响因子:
15
作者:
Cortecchia, Daniele;Neutzner, Stefanie;Petrozza, Annamaria
通讯作者:
Petrozza, Annamaria
影响因子:
2.8
作者:
HIRASAWA, M;ISHIHARA, T;MIURA, N
通讯作者:
MIURA, N
影响因子:
2.9
作者:
Even, Jacky;Pedesseau, Laurent;Katan, Claudine
通讯作者:
Katan, Claudine